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FlowMetal™ Nano silver paste for sintering

Nano silver paste for die attach process which can be bonded at low temperatures

Typical bonding materials like solder, re-melts when exposed to high temperature.

Thus, typical solder is unusable for power semiconductors such as SiC and GaN which are used in high temperature environment.
FlowMetal™ nano silver paste is designed as a new bonding material to solve the problem.

Although the sintered body of silver nanoparticles is dense with small number of pores in the structure, it retains low electrical resistance and high thermal conductivity almost as the same as silver.

FlowMetal™ Nano silver paste for sintering

특징

・A bonding material designed using our exclusive silver nanoparticles.
FlowMetal™ nano silver paste is manufactured using silver nanoparticles synthesized by our company.
Specifications with higher silver particle concentration (85-97wt%) are available.
The product is lead-free.

・Low bonding temperature with excellent heat resistance, electrical conductivity, thermal conductivity.
Production technology of low-temperature sintering type silver nanoparticle enables sinter bonding of the nano silver paste at low temperatures.
It is known that silver nanoparticles sinter at low temperature due to the size effect, and the melting point of the sintered silver is similar to that of bulk silver (962℃).

・Pressure-less sintering
 In spite of being pressure-less, the low-temperature sintering process provides high bonding strength through diffusion reactions between the nanoparticles and the substrate metal.
Pressure-free sintering may not be suitable depending on the conditions. There is also specifications for sintering with pressure.

인쇄 방법

Dispenser, metal mask (stencil) printing, or pin transfer process are available.

Applicable Surfaces

금, 은, 구리

Product Specifications

SR9200

SR9870

(Under development)

SR9950

특징

낮은 소결 온도

Pressure-less sintering to bare Cu surface

낮은 소결 온도

Medium die size

어플리케이션 LED, UV-LED, LD

Power semiconductor (Si、SiC)

Power semiconductor (Si、SiC)

작은 다이

(~1.5mm×1.5mm)

대형 다이

(~10mm×10mm)

Medium Dies

(~5mm×5mm)

Applicable Surface 은, 금 Ag, Au, Cu 은, 금

프로세스

Conditions

인쇄 방법

약제사

Pin transfer process

금속 마스크 인쇄 약제사

소결

Atmosphere

공기

Nitrogen or Air

공기

소결

Temperature (ºC)

150 275 200

Sintering Time

(분)

120 30 60
Sintering Pressure Pressure-less Pressure-less Pressure-less

속성

~ 후에

소결

Shear Strength

(메가파)

>70

(1mm×1mm)

>90

(2.5mm×2.5mm)

>120

(3mm×3mm)

열의

Conductivity

(W/mK)

140 300 215

Electric Resistivity

(μΩcm)

5 2 3

표의 값은 대표값입니다. 사양은 예고 없이 변경될 수 있습니다.

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